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Premium member Presentation Transcript Slide 1: Instructor: Dr. Michael Geiger Fall 2008 Lecture 5: Static & Dynamic Memory ECE 461/ECE 566Microprocessors IUniversity of Massachusetts Dartmouth Outline : 12/2/2009 ECE 461/566: Lecture 5 2 Outline Announcements Quiz 3 next time—covers today’s lectures ECE 566 research paper posted (due 11/19) Reminder: regrade requests Extension until next week Cover lecture 6 as well today Memory organization SRAM DRAM Memory configuration : 12/2/2009 ECE 461/566: Lecture 5 3 Memory configuration Talk about memory using 2 terms Capacity: # of bits (or bytes) memory contains Organization: (# of locations) x (bits per location) Product = capacity of each “chip” Examples: 4M x 8 4 MB 32M x 1 4 MB Memory organization, pt. 2 : 12/2/2009 ECE 461/566: Lecture 5 4 Memory organization, pt. 2 Can approach overall memory setup from a couple of perspectives: Given memory organization, how many chips do we need to provide appropriate amount of data? i.e., minimum # of chips needed to fill data bus For example, need two 64K x 8 RAMs for project Given a specific number of chips with a given organization, how do we set them up? Can end up with multiple “rows” of memory Memory organization ex. 1 : Memory organization ex. 1 What’s the minimum number of memory chips we need to build a 68000-based system, given an organization of: 64K x 16? 32K x 4? 128K x 2? Remember, data bus is 16 bits; therefore: Need 1 64K x 16 chip Need 4 64K x 4 chips (4 chips x 4 data bits/chip = 16) Need 8 128K x 2 chips (8 chips x 2 data bits/chip = 16) 12/2/2009 ECE 461/566: Lecture 5 5 Memory organization ex. 2 : 12/2/2009 ECE 461/566: Lecture 5 6 Memory organization ex. 2 How would we organize the following sets of memory modules? Two 128K x 8 chips? Four 64M x 4 chips? Sixteen 32K x 2 chips? What’s the decoding circuitry look like for each of these organizations? Memory organization ex. 2 (cont.) : 12/2/2009 ECE 461/566: Lecture 5 7 Memory organization ex. 2 (cont.) Two 128K x 8 chips One chip holds upper bytes (D15 – D8), other holds lower bytes (D7 – D0) Both share same address range Upper chip enabled with UDS*, lower with LDS* Four 64M x 4 chips? Two chips to hold upper bytes, other two hold lower bytes Both share same address range Upper chips enabled with UDS*, lower with LDS* Sixteen 32K x 2 chips? Only need 8 of these to fill 16-bit data bus, so two “rows” of memory, each with its own address range, spanning 64 KB Within each row, 4 chips for upper bytes, 4 for lower Memory characteristics : 12/2/2009 ECE 461/566: Lecture 5 8 Memory characteristics RAM (random access memory) vs. ROM (read-only memory) If general-purpose computer, most of the immediate access memory is RAM If intended for a single task, it’s mostly ROM Some ROM is always necessary Two choices with RAM Static RAM (SRAM) Dynamic RAM (DRAM) SRAM vs. DRAM : 12/2/2009 ECE 461/566: Lecture 5 9 SRAM vs. DRAM Static memory 6 transistors per cell Straightforward to use Dynamic memory 1 transistor per cell More complex Address multiplexing Refresh SRAM implementation : 12/2/2009 ECE 461/566: Lecture 5 10 SRAM implementation Word line (WL) selects appropriate row On read, cell drives bitline (BL) values On write, bitlines are driven and values are stored SRAM timing : 12/2/2009 ECE 461/566: Lecture 5 11 SRAM timing Read (L): Assert OE*; assert CS* once address valid Write (R): Assert CS* when address valid; WE* once processor chooses write operation DRAM implementation : 12/2/2009 ECE 461/566: Lecture 5 12 DRAM implementation Store information as charge on capacitor Charge leaks from capacitor Requires refresh Small cell size allows higher density … but requires more address pins Multiplex addresses—row and column DRAM timing (read) (p. 385) : 12/2/2009 ECE 461/566: Lecture 5 13 DRAM timing (read) (p. 385) Row address strobe (RAS) indicates row address on address bus Column address strobe (CAS) indicates column address on address bus DRAM timing (write) (p. 386) : 12/2/2009 ECE 461/566: Lecture 5 14 DRAM timing (write) (p. 386) RAS/CAS timing similar to read W* (write enable) asserted once processor indicates write operation is to take placs DRAM controller : 12/2/2009 ECE 461/566: Lecture 5 15 DRAM controller One problem with these signals: what’s processor actually give you? Need DRAM controller to take processor outputs and generate appropriate signals RAS, CAS, refresh cycles You do not have the permission to view this presentation. In order to view it, please contact the author of the presentation.
uP1_lec5_memory tkvarvel Download Post to : URL : Related Presentations : Share Add to Flag Embed Email Send to Blogs and Networks Add to Channel Uploaded from authorPOINT lite Insert YouTube videos in PowerPont slides with aS Desktop Copy embed code: (To copy code, click on the text box) Embed: URL: Thumbnail: WordPress Embed Customize Embed The presentation is successfully added In Your Favorites. Views: 59 Category: Entertainment License: All Rights Reserved Like it (0) Dislike it (0) Added: December 02, 2009 This Presentation is Public Favorites: 0 Presentation Description No description available. Comments Posting comment... Premium member Presentation Transcript Slide 1: Instructor: Dr. Michael Geiger Fall 2008 Lecture 5: Static & Dynamic Memory ECE 461/ECE 566Microprocessors IUniversity of Massachusetts Dartmouth Outline : 12/2/2009 ECE 461/566: Lecture 5 2 Outline Announcements Quiz 3 next time—covers today’s lectures ECE 566 research paper posted (due 11/19) Reminder: regrade requests Extension until next week Cover lecture 6 as well today Memory organization SRAM DRAM Memory configuration : 12/2/2009 ECE 461/566: Lecture 5 3 Memory configuration Talk about memory using 2 terms Capacity: # of bits (or bytes) memory contains Organization: (# of locations) x (bits per location) Product = capacity of each “chip” Examples: 4M x 8 4 MB 32M x 1 4 MB Memory organization, pt. 2 : 12/2/2009 ECE 461/566: Lecture 5 4 Memory organization, pt. 2 Can approach overall memory setup from a couple of perspectives: Given memory organization, how many chips do we need to provide appropriate amount of data? i.e., minimum # of chips needed to fill data bus For example, need two 64K x 8 RAMs for project Given a specific number of chips with a given organization, how do we set them up? Can end up with multiple “rows” of memory Memory organization ex. 1 : Memory organization ex. 1 What’s the minimum number of memory chips we need to build a 68000-based system, given an organization of: 64K x 16? 32K x 4? 128K x 2? Remember, data bus is 16 bits; therefore: Need 1 64K x 16 chip Need 4 64K x 4 chips (4 chips x 4 data bits/chip = 16) Need 8 128K x 2 chips (8 chips x 2 data bits/chip = 16) 12/2/2009 ECE 461/566: Lecture 5 5 Memory organization ex. 2 : 12/2/2009 ECE 461/566: Lecture 5 6 Memory organization ex. 2 How would we organize the following sets of memory modules? Two 128K x 8 chips? Four 64M x 4 chips? Sixteen 32K x 2 chips? What’s the decoding circuitry look like for each of these organizations? Memory organization ex. 2 (cont.) : 12/2/2009 ECE 461/566: Lecture 5 7 Memory organization ex. 2 (cont.) Two 128K x 8 chips One chip holds upper bytes (D15 – D8), other holds lower bytes (D7 – D0) Both share same address range Upper chip enabled with UDS*, lower with LDS* Four 64M x 4 chips? Two chips to hold upper bytes, other two hold lower bytes Both share same address range Upper chips enabled with UDS*, lower with LDS* Sixteen 32K x 2 chips? Only need 8 of these to fill 16-bit data bus, so two “rows” of memory, each with its own address range, spanning 64 KB Within each row, 4 chips for upper bytes, 4 for lower Memory characteristics : 12/2/2009 ECE 461/566: Lecture 5 8 Memory characteristics RAM (random access memory) vs. ROM (read-only memory) If general-purpose computer, most of the immediate access memory is RAM If intended for a single task, it’s mostly ROM Some ROM is always necessary Two choices with RAM Static RAM (SRAM) Dynamic RAM (DRAM) SRAM vs. DRAM : 12/2/2009 ECE 461/566: Lecture 5 9 SRAM vs. DRAM Static memory 6 transistors per cell Straightforward to use Dynamic memory 1 transistor per cell More complex Address multiplexing Refresh SRAM implementation : 12/2/2009 ECE 461/566: Lecture 5 10 SRAM implementation Word line (WL) selects appropriate row On read, cell drives bitline (BL) values On write, bitlines are driven and values are stored SRAM timing : 12/2/2009 ECE 461/566: Lecture 5 11 SRAM timing Read (L): Assert OE*; assert CS* once address valid Write (R): Assert CS* when address valid; WE* once processor chooses write operation DRAM implementation : 12/2/2009 ECE 461/566: Lecture 5 12 DRAM implementation Store information as charge on capacitor Charge leaks from capacitor Requires refresh Small cell size allows higher density … but requires more address pins Multiplex addresses—row and column DRAM timing (read) (p. 385) : 12/2/2009 ECE 461/566: Lecture 5 13 DRAM timing (read) (p. 385) Row address strobe (RAS) indicates row address on address bus Column address strobe (CAS) indicates column address on address bus DRAM timing (write) (p. 386) : 12/2/2009 ECE 461/566: Lecture 5 14 DRAM timing (write) (p. 386) RAS/CAS timing similar to read W* (write enable) asserted once processor indicates write operation is to take placs DRAM controller : 12/2/2009 ECE 461/566: Lecture 5 15 DRAM controller One problem with these signals: what’s processor actually give you? Need DRAM controller to take processor outputs and generate appropriate signals RAS, CAS, refresh cycles