logging in or signing up OAtube Nanotechnology 1, 905 (2008) oatube Download Post to : URL : Related Presentations : Share Add to Flag Embed Email Send to Blogs and Networks Add to Channel Uploaded from authorPOINT lite Insert YouTube videos in PowerPont slides with aS Desktop Copy embed code: (To copy code, click on the text box) Embed: URL: Thumbnail: WordPress Embed Customize Embed The presentation is successfully added In Your Favorites. Views: 1278 Category: Science & Tech.. License: All Rights Reserved Like it (3) Dislike it (0) Added: September 05, 2008 This Presentation is Public Favorites: 0 Presentation Description InGaAs/GaAs Quantum Dots for 1.3 µm Applications / U. W. Pohl, A. Schliwa. I. Kaiander, T. Germann, A. Strittmatter, and D. Dimberg, OAtube Nanotechnology 1, 905 (2008). http://www.oatube.org/2008/09/uwpohl.html Comments Posting comment... Premium member Presentation Transcript Tuning of InGaAs Dots : Tuning of InGaAs Dots F. Heinrichsdorff et al., 41th EMC St. Barbara (1999) Outline : Outline Basic Concepts for Long Wavelength Emission QW overgrowth DWELL structures Growth Issues of MOVPE spacers in QD stacks the role of V/III ratio Roadmap for GaAs-based Long Wavelength Emission : Roadmap for GaAs-based Long Wavelength Emission Electronic Properties of QDs : Electronic Properties of QDs Variation of QD Size and In/Ga Ratio : Variation of QD Size and In/Ga Ratio Large InAs/GaAs QDs : Large InAs/GaAs QDs Wavelength Tuning by QW Overgrowth : Wavelength Tuning by QW Overgrowth Example: QD Overgrowth with InGaAs QW : Example: QD Overgrowth with InGaAs QW Wavelength Tuning by QW Overgrowth Impact of QD Overgrowth : Impact of QD Overgrowth DWELL Structures : DWELL Structures Defects at Overgrown Dot Structures : Defects at Overgrown Dot Structures InGaAs/GaAs Dots in Gain Media : InGaAs/GaAs Dots in Gain Media Sample Structures : Sample Structures Limitation of QD stackability : Limitation of QD stackability 0 25 mm Growth Interruption after QD Deposition : Growth Interruption after QD Deposition QD LASER : QD LASER Roadmap for Further Improvements : Roadmap for Further Improvements QD-Emission Tuning : QD-Emission Tuning Laser Designed for 1300 nm Emission : Laser Designed for 1300 nm Emission Origin of Blue Shift : Origin of Blue Shift Maintain PL Efficiency : Maintain PL Efficiency Conclusion : Conclusion Overgrowth of In(Ga)As/GaAs dots with an InGaAs SRLis promising for reaching 1.30 mm emission with MOVPE Crucial issues to obtain 1.30 mm lasing are - the achievement of a high dot density (rQD, dspacer) - the suppression of emission blueshift during upper-cladding growth A low V/III ratio suppresses In-Ga interdiffusion You do not have the permission to view this presentation. In order to view it, please contact the author of the presentation.
OAtube Nanotechnology 1, 905 (2008) oatube Download Post to : URL : Related Presentations : Share Add to Flag Embed Email Send to Blogs and Networks Add to Channel Uploaded from authorPOINT lite Insert YouTube videos in PowerPont slides with aS Desktop Copy embed code: (To copy code, click on the text box) Embed: URL: Thumbnail: WordPress Embed Customize Embed The presentation is successfully added In Your Favorites. Views: 1278 Category: Science & Tech.. License: All Rights Reserved Like it (3) Dislike it (0) Added: September 05, 2008 This Presentation is Public Favorites: 0 Presentation Description InGaAs/GaAs Quantum Dots for 1.3 µm Applications / U. W. Pohl, A. Schliwa. I. Kaiander, T. Germann, A. Strittmatter, and D. Dimberg, OAtube Nanotechnology 1, 905 (2008). http://www.oatube.org/2008/09/uwpohl.html Comments Posting comment... Premium member Presentation Transcript Tuning of InGaAs Dots : Tuning of InGaAs Dots F. Heinrichsdorff et al., 41th EMC St. Barbara (1999) Outline : Outline Basic Concepts for Long Wavelength Emission QW overgrowth DWELL structures Growth Issues of MOVPE spacers in QD stacks the role of V/III ratio Roadmap for GaAs-based Long Wavelength Emission : Roadmap for GaAs-based Long Wavelength Emission Electronic Properties of QDs : Electronic Properties of QDs Variation of QD Size and In/Ga Ratio : Variation of QD Size and In/Ga Ratio Large InAs/GaAs QDs : Large InAs/GaAs QDs Wavelength Tuning by QW Overgrowth : Wavelength Tuning by QW Overgrowth Example: QD Overgrowth with InGaAs QW : Example: QD Overgrowth with InGaAs QW Wavelength Tuning by QW Overgrowth Impact of QD Overgrowth : Impact of QD Overgrowth DWELL Structures : DWELL Structures Defects at Overgrown Dot Structures : Defects at Overgrown Dot Structures InGaAs/GaAs Dots in Gain Media : InGaAs/GaAs Dots in Gain Media Sample Structures : Sample Structures Limitation of QD stackability : Limitation of QD stackability 0 25 mm Growth Interruption after QD Deposition : Growth Interruption after QD Deposition QD LASER : QD LASER Roadmap for Further Improvements : Roadmap for Further Improvements QD-Emission Tuning : QD-Emission Tuning Laser Designed for 1300 nm Emission : Laser Designed for 1300 nm Emission Origin of Blue Shift : Origin of Blue Shift Maintain PL Efficiency : Maintain PL Efficiency Conclusion : Conclusion Overgrowth of In(Ga)As/GaAs dots with an InGaAs SRLis promising for reaching 1.30 mm emission with MOVPE Crucial issues to obtain 1.30 mm lasing are - the achievement of a high dot density (rQD, dspacer) - the suppression of emission blueshift during upper-cladding growth A low V/III ratio suppresses In-Ga interdiffusion