ilc analyse

ECAL analysis (very preliminary results): 

ECAL analysis (very preliminary results) L. Morin et J-Y. Hostachy LPSC-Grenoble M. Krim Université de Casablanca

Slide2: 

Cuts on the shower shape Sigma_X = root mean square in x of the shower Sigma_Y = root mean square in y of the shower Sigma_Z = root mean square in z of the shower E (i.e. deposited energy ) = 1 x signal in layers 1-10 + 2 x signal in layers 11-20 + 3 x signal in layers 21-30 before cuts after cuts  Electron selection (i.e. rejection of other particules)

Slide3: 

Checking: cuts on the shower shape Sigma_X = root mean square in x of the shower Sigma_Y = root mean square in y of the shower Sigma_Z = root mean square in z of the shower The cuts are represented in red

Slide4: 

Electron identification with the Cherenkov ! In dark blue: all events In light blue: Cherenkov identification (i.e. electrons !) In red: cuts on the shower shape  electrons

Slide5: 

Evolution of shower shape as a function of the energy Transversely: no big dependence Electrons Longitudinally: logarithmic dependence r = (x2 + y2)1/2 Uncertain point

Slide6: 

Mapping of the reconstructed energy Using the cuts on the shower shape (i.e. electrons)

Slide7: 

The red lines represent the profile limits (see next slide) Deposited energy as a function of the shower barycenter

Slide8: 

Deposited energy as a function of the shower barycenter Inefficiency due to the guard rings of the Si wafers Oscillations due to the geometry of the detection silicon pads The events affected by the inefficiency of the guard rings will be rejected (red lines;  optimistic results)

Slide9: 

Energy spectra In blue: all events In red: electrons events (cuts on the shower shape) In yellow: electrons events in the central surface of the wafer In green: other electron events affected by the guard ring surfaces

Slide10: 

Energy resolution 6 GeV electrons With a ≈ 18.3 %