JCV1

Detector slab assembling : 

Detector slab assembling General view PCB, chip Si Wafer Gluing Passive component Schedule

Slide2: 

Al. Shielding PCB (multi-layers) ( 2.4 mm) Silicon wafer (0.525 mm) Tungsten (1.4 mm, 2×1.4 or 3×1.4 mm) 8.5 mm Composite structure (0.15 mm / layer) Transverse view Detector slab PCB : 14 layers Thickness 2.4 mm

Sizes of the structure : Slab: 

Sizes of the structure : Slab 8,3 mm Aluminum foil : ~0.1 mm PCB : 2.4 mm Wafer : 0.525 mm Carbon fiber : 0.15 mm W plate : 1.4 mm

Slide4: 

PCB Chip PCB, Chip : still in progress Talk : Julien Fleury

Slide5: 

Si Wafer : One wafer is a Matrix of 6 x 6 pixel of 1 cm2. Important point : manufacturing must be as simple as possible to be near of what could be the real production for full scale detector in order to : Keep lower price (a minimum of step during processing) Low rate of rejected processed wafer good reliability and large robustness Number of active Wafer needed for the physic prototype : 270. 150 will be produce by Institute of Nuclear Physics - Moscow State University 150 will be produce by Institute of Physics, Academy of Sciences of the Czech Republic - Prague

Slide6: 

ECAL prototype silicon wafer description Dead zone width is only 1mm 4” High resistive wafer : 5 Kcm Thickness : 525 microns  3 % Tile side : Guard ring In Silicone ~80 e-h pairs / micron  42000 e- /MiP Capacitance : ~25 pF Leakage current : 1 – 5 nA Full depletion bias : ~150 V Nominal operating bias : 200 V

Si Wafer : production: 

Si Wafer : production Institute of Nuclear Physics - Moscow State University First test production with 43 wafers (February 03)  39 good (leakage current less than 3 nA) Delivery of 100 “good” wafers in end of November 03 Institute of Physics, Academy of Sciences of the Czech Republic – Prague Talk from V.Vrba “Silicon wafers - design/production in Praha”

Wafer productionInstitute of Nuclear Physics - Moscow State University: 

Wafer production Institute of Nuclear Physics - Moscow State University Leakage curent (nA) Capacitance : ~25 pF Leakage current : 1 – 5 nA Full depletion bias : ~150 V Nominal operating bias : 200 V

Wafer production :Institute of Nuclear Physics - Moscow State University: 

Wafer production : Institute of Nuclear Physics - Moscow State University

Wafer productionInstitute of Nuclear Physics - Moscow State University: 

Wafer production Institute of Nuclear Physics - Moscow State University

Gluing of Si wafer: 

Gluing of Si wafer A automatic device is use to deposit the conductive glue : X-Y-Z table (400×400×150 mm3) with glue dispensing tool (conductive glue) Gluing and placement ( 0.1 mm) of 270 wafers with 6×6 pads About 10 000 points of glue.

Gluing of Si wafer: 

Gluing of Si wafer Choice of the Glue : Good conductivity Polymerization at low temperature (Typ. ~ 40° C) Time of polymerization Some test : First : PCB on PCB : started Second : with real Si wafer : to be done ! EPO-TEK® EE129-4 : Room temp/16 hr cure: 0.0096 ohm-cm Room temp/20 hr cure: 0.0090 ohm-cm Room temp/72 hr cure: 0.003 ohm-cm

Gluing of Si wafer :Preliminary results : PCB/PCB, T=25° C: 

Gluing of Si wafer : Preliminary results : PCB/PCB, T=25° C ~ 0.5 mm3 ~ 4 mm3

Gluing of Si wafer :Preliminary results : PCB/PCB, R = F(T): 

Gluing of Si wafer : Preliminary results : PCB/PCB, R = F(T)

Slide15: 

PCB Wafers The aluminium sheet is the ground Aluminium sheet Amorphous silicon deposition  Resistance  Capacitance (AC coupling) Yvan Bonnasieux Physique des Interfaces et Couches Minces - Ecole Polytechnique - Palaiseau

Passive component on the wafer :: 

Passive component on the wafer : Capacitance : Dielectric : silicone nitrite Refractive index : n=2 Thickness : e = 2 m Resistance : material : aSiH Resistivity : =1011 .cm Thickness : l = 2 m C= 1,32 nF R= 102 M The passive component on the wafer will be not use for the physic prototype. Passive component will be discrete capacitances and resistances on the PCB.

Physic Prototype : Planning: 

Physic Prototype : Planning

Physic Prototype : Planning: 

Physic Prototype : Planning 2003 2004

Point to be discuss today :: 

Point to be discuss today : Wafer production Mechanics for the Test Beam Cosmic test Event Builder …