FRAM

Slide 1: 

WELCOME

CONTENT: 

CONTENT INTRODUCTION HISTORY DISCRIPTION OR FRAM TECHNOLOGY FRAM SPECIFICATION LOW POWER OPERATION ADVANTAGE DISADVANTAGE APPLICATION CURRENT APPLICATION FUTURE APPLICATION FUTURE OF FRAM CONCLUSION REFERANCE

INTRODUCTION: 

INTRODUCTION FRAM is a type of non-volatile read-write random access semiconductor memory.FRAM combines the advantages of SRAM and writing is roughly as first as reading and EPROM non volatility and in circuit programmability.FRAM is radom access memory that combines the first read and write access of DRAM-the most common kind of PC memory. it is the firstb with a very law power requirement,it is expected to have many application in small consumer devices Such as personal digital assistants(PDA),hand held phones,power metres and smartcard,in security system.FRAM is faster than flash memory.it is excepted to replace EEPROM and SRAM for some application to become a key component in future wireless product.

HISTORY: 

HISTORY Ferroelectric RAM was proposed by M.I.T. graduate student Dudley Allen Buck . Development of FRAM began in the late 1980’s and it work was done in 1991 in NASA. FRAM developed by Ramtron company Since at 2001, Developed 130 nm FRAM, and 2005 developed 180 nm FRAM

DISCRIPTION OR FRAM TECHNOLOGY : 

DISCRIPTION OR FRAM TECHNOLOGY FRAM include one capacitor and one access transistor Cell consist of one capacitor and one transistor,a so called “1T—1C” device Dielectric is used ferroelectric material Lead zirconate titanate (PZT)

DESCRIPTION (cont): 

DESCRIPTION (cont) Then applying an electric field and the capacitor charges then writing is done Then applying an electric field and capacitor discharges and reading is done The FRAM was re-written FRAM is similar to ferrite core memory

FRAM SPECIFICATION : 

FRAM SPECIFICATION 4MB FRAM NONVOLATILE MEMORY MODULE Organization: four bankes. Highest density: ferroelectric memory over 22.4kb/mm. 10 year data retension at 85 oc. Unlimited read/write cycle. Advanced high reliability and ferro electric process SRAM and DRAM compatible 70ns access time. 130 ns cycle time. Equal access & cycle time for read and write

LOW POWER OPERATION : 

LOW POWER OPERATION 2.7v to 3.6v operation 15ma active current 15 micro A stand by current 1.875 square micron cell size

ADVANTAGE: 

ADVANTAGE FRAM allows system to retain information even when power is lost without resorting to batteries,EEPROM,or flash. Access time are the same as for standard SRAM,so there no delay at write access there is for a EEPROM or flash. Low power consumption,voltage operation and high write endurance make it suprior then other non volatile memories like EEPROM and flash. It is less expensive then magnetic memories which requir four extra mask.

DISADVANDAGE : 

DISADVANDAGE Present in high cost Low density compared to DRAM & SRAM

APPLICATION: 

APPLICATION small consumer devices Personal digital assistants(PDA) Hand held phone Power meters Security system Smart card Electronic cash payment Storage circuit RF circuit

CURRENT APPLICATION : 

CURRENT APPLICATION Data collection and logging Configuration storage Non volatile buffer SRAM replacement and logging

FUTURE APPLICATION : 

FUTURE APPLICATION Airbag Telematics-navigation Entertainment Instrumental cluster Tyre pressure ABS-system stabilty control Power train Crash recording(black box) Electronice shift Traction control Dynamic stabilty control

FUTURE OF FRAM : 

FUTURE OF FRAM Development of fram in full rang of densities and operating temp to support auto motive data handling and storage application will find a wide variety of application as said above And in addition, the FRAM tech and can easily we combined with logic and mixed signal tech and to offer more effective integrated solution in the future.

CONCLUSION: 

CONCLUSION The bigest obstacle to large memories is there large power consumption,particularly for wirless application.but FRAM’s advantage is the low poer consumption compare to other new memory technologies, and hence ecnomice.the wide range of application it has in case smart card and data storage application,together with the future and automotiv application make it one of the best memories among the new memory technologies and among ferro magenetic and ovonic memorise.

REFERENCES: 

REFERENCES Information technology magazine http://www.ieee.org http://www.eetuk.com http://www.save my files.com